Electrostatic Performance of Heterostructures with Hetero Dielectric Double Gate Pin Tunneling Graphene Nanoribbon FET

The Hetero Dielectric Double Gate PiN tunneling graphene nanoribbon field effect transistor (HD-DG-PiN-GNRTFET) is the subject of a novel 2D theoretical model proposed in this paper. The effects of hetero dielectric materials and double gates for varying gate and drain voltages applied to the device are considered in this analytical model. With two distinct dielectric constants, the dielectric material regime in this device has been divided into two portions. A low band-gap graphene material is employed as a channel to minimize the band-gap energy. This reduces tunneling width, where the tunneling rate is considered to increase largely across source and channel regime. Because of the strong switching performance, the ION/IOFF ratio will improve, increasing the ON-State current and reducing leakage current. Model the electrostatic properties across the channel, including the electric field and surface potential, using the 2-D Poisson's equation. Kane's Model Equation is used to extract drain current performance. The T-CAD simulator is used to validate the obtained analytical results.