A Study of Graphene FET for Better Performance

This presentation offers an outline of the current status of research and development in the field of graphene field-effect transistors (GFETs). Graphene, a one-atom-thick sheet of carbon atoms organized in a hexagonal lattice, possesses distinct electrical characteristics that make it a potential material for application in electronic devices. Molecules are linked to the channel sites in this study by covalent bonding, electrostatic forces, resulting in an electronic transmission over the whole depth of the device. The Nanohub simulation Tool is used for the performance analysis. For varied channel lengths, the electrostatic properties of the device such as drain current, temperature sensitivity, and current density are retrieved. Owing to the increased performance of the features the device is employed in a large range of uses such as optical sensing, magnetic sensing, and biosensing. © 2023 IEEE.